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  i ntegrated c ircuits d ivision optocoupler, bidirectional input darlington-transistor output www.ixysic.com ds-lda110-r06 1 lda110 e 3 pb part number description lda110 6-pin dip (50/tube) LDA110S 6-pin surface mount (50/tube) LDA110Str 6-pin surface mount (1000/reel) parameter rating units breakdown voltage - bv ceo 30 v p current transfer ratio ctr (typical) 8500 % saturation voltage - v ce (sat) 1v input control current - i f 1ma applications features description ordering information pin configuration ? telecom switching ? tip/ring circuits ? modem switching (laptop, notebook, pocket size) ? loop detect ? ringing detect ? current sensing ? 100ma continuous load rating ? 3750v rms input/output isolation ? bidirectional input ? small 6-pin package, thru-hole or surface mount ? machine insertable, wave solderable ? surface mount tape & reel packaging available lda110 is a bidirectional-input optocoupler with a darlington-transistor output. the lda110 has a minimum current transfer ratio (ctr) of 300% with a maximum value of 30,000%. approvals 1 3 2 a/k a/k 4 5 6 b c e ? ul recognized component: file e76270 ? csa certified component: certificate 1175739 ? en/iec 60950-1 certified component: tuv certificate b 09 07 49410 006
i ntegrated c ircuits d ivision www.ixysic.com 2 r06 lda110 absolute maximum ratings are stress ratings. stresses in excess of these ratings can cause permanent damage to the device. functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. absolute maximum ratings @ 25oc parameter ratings units breakdown voltage 30 v p input control current 100 ma peak (10ms) 1 a power dissipation input power dissipation 1 150 mw phototransistor 2 150 mw isolation voltage, input to output 3750 v rms operational temperature -40 to +85 c storage temperature -40 to +125 c 1 derate linearly 1.33mw / o c 2 derate linearly 2mw / o c electrical characteristics @ 25oc parameter conditions symbol min typ max units output characteristics phototransistor breakdown voltage i c = 100a bv ceo 30 85 - v phototransistor dark current v ceo = 5v, i f = 0ma i ceo - 50 500 na saturation voltage i c = 3ma, i f = 1ma v ce(sat) --1v current transfer ratio i f = 1ma, v ce = 2v ctr 300 8500 30000 % output capacitance 25v, f =1mhz c out -3-pf input characteristics input control current i c = 3ma, v ce = 2v i f - 0.07 1 ma input voltage drop i f = 5ma v f 0.9 1.2 1.4 v common characteristics capacitance, input to output - c i/o -3-pf characteristic symbol test condition typ units turn-on time t on v cc =5v, i f =1ma, r l =500 ? 8 ? s turn-off time t off 345 switching characteristics @ 25oc switching time test circuit v cc v ce r l i f pulse width=5ms duty cycle=1% i f 10% 90% t on t off v ce
i ntegrated c ircuits d ivision lda110 www.ixysic.com 3 r06 *the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in t he written speci? cations, please contact our application department. performance data @25oc (unless otherwise noted)* led forward voltage (v) 1.0 1.1 1.2 1.3 1.4 1.5 1.6 led forward current (ma) 0 10 20 30 40 50 led voltage vs. current led forward voltage (v) 1.0 1.1 1.2 1.3 1.4 1.5 1.6 led forward current (ma) 0.1 1 10 100 led voltage vs. current (log) temperature (oc) -40 -20 0 20 40 60 80 100 led forward voltage (v) 1.0 1.1 1.2 1.3 1.4 1.5 1.6 led forward voltage vs. temperature i f =50ma i f =20ma i f =10ma i f =5ma i f =2ma i f =1ma led forward current (ma) 246810 ctr (%) 0 5000 10000 15000 20000 typical ctr vs. led forward current (v ce =5v) 0 -40oc 85oc 25oc typical collector current vs. collector voltage collector voltage v ce (v) 0123456 collector current i c (ma) 0 50 100 150 200 250 i f =10ma i f =20ma i f =5ma i f =1ma i f =2ma i f =0.5ma temperature (oc) -40 -20 0 20 40 60 80 100 i ce current (ma) 0 50 100 150 200 250 i ce current vs. temperature (v ce =5v) i f =10ma i f =5ma i f =2ma i f =1ma i f =0.5ma i f =0.2ma i f =0.1ma temperature (oc) -40 -20 0 20 40 60 80 100 v ce(sat) (v) 0.70 0.75 0.80 0.85 0.90 0.95 v ce(sat) vs. temperature (i f =1ma, i c =3ma) temperature (oc) -40 -20 0 20 40 60 80 100 leakage (na) 0 200 400 600 800 1000 1200 1400 leakage current vs. temperature v cc =10v v cc =3v v cc =5v load resistance ( : ) 1x10 2 1x10 3 1x10 4 1x10 5 turn-on time ( p s) 6.8 6.9 7.0 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8.0 turn-on time vs. load resistance (i f =1ma, v cc =5v) load resistance ( : ) 1x10 2 1x10 3 1x10 4 1x10 5 turn-off time ( p s) 0 5000 10000 15000 turn-off time vs. load resistance (i f =1ma, v cc =5v)
i ntegrated c ircuits d ivision www.ixysic.com 4 r06 lda110 manufacturing information moisture sensitivity all plastic encapsulated semiconductor packages are susceptible to moisture ingression. ixys integrated circuits division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, ipc/jedec j-std-020 , in force at the time of product evaluation. we test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. this product carries a moisture sensitivity level (msl) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard ipc/jedec j-std-033 . device moisture sensitivity level (msl) rating lda110 / LDA110S msl 1 esd sensitivity this product is esd sensitive , and should be handled according to the industry standard jesd-625 . reflow profile this product has a maximum body temperature and time rating as shown below. all other guidelines of j-std-020 must be observed. device maximum temperature x time lda110 / LDA110S 250oc for 30 seconds board wash ixys integrated circuits division recommends the use of no-clean flux formulations. however, board washing to remove flux residue is acceptable. since ixys integrated circuits division employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a wash is used after solder reflow processes. chlorine- or fluorine-based solvents or fluxes should not be used. cleaning methods that employ ultrasonic energy should not be used. e 3 pb
i ntegrated c ircuits d ivision lda110 www.ixysic.com 5 r06 lda110 LDA110S dimensions mm (inches) pcb land pattern 0.254 0.0127 (0.010 0.0005) 7.620 0.254 (0.300 0.010) 0.635 0.127 (0.025 0.005) 3.302 0.051 (0.130 0.002) 4.445 0.254 (0.175 0.010) 2.54 (0.10) 8.90 (0.3503) 1.65 (0.0649) 0.65 (0.0255) 8.382 0.381 (0.330 0.015) 2.54 0.127 (0.100 0.005) 9.524 0.508 (0.375 0.020) 6.350 0.127 (0.250 0.005) 0.457 0.076 (0.018 0.003) 1.651 0.254 (0.065 0.010) 1.651 0.254 (0.065 0.010) pin 1 dimensions mm (inches) pcb hole pattern 6.350 0.127 (0.250 0.005) 2.540 0.127 (0.100 0.005) 7.620 0.127 (0.300 0.005) 5.080 0.127 (0.200 0.005) 6 - 0.800 dia. (6 - 0.031 dia.) 0.254 0.0127 (0.010 0.0005) 9.144 0.508 (0.360 0.020) 7.239 typ (0.285 typ) 7.620 0.254 (0.300 0.010) 3.302 0.051 (0.130 0.002) 4.064 typ (0.160 typ) 0.457 0.076 (0.018 0.003) 8.382 0.381 (0.330 0.015) 2.54 0.127 (0.100 0.005) 6.350 0.127 (0.250 0.005) 1.651 0.254 (0.065 0.010) pin 1 mechanical dimensions
i ntegrated c ircuits d ivision for additional information please visit our website at: www.ixysic.com 6 lda110 ixys integrated circuits division makes no representations or warranties with respect to the accuracy or completeness of the co ntents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. neither circuit patent licenses nor indemnity a re expressed or implied. except as set forth in ixys integrated circuits division?s standard terms and conditions of sale, ixys integrated circuits division assumes no liability whatsoever, a nd disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infri ngement of any intellectual property right. the products described in this document are not designed, intended, authorized or warranted for use as components in systems in tended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of ixys integrated circuits division?s product may resul t in direct physical harm, injury, or death to a person or severe property or environmental damage. ixys integrated circuits division reserves the right to discontinue or make changes to its p roducts at any time without notice. specification: ds-lda110-r06 ?copyright 2012, ixys integrated circuits division all rights reserved. printed in usa. 12/22/2012 LDA110Str tape & reel notes: 1. all dimensions carry tolerances of eia standard 481-2 2. the tape complies with all notes for constant dimensions listed on page 5 of eia-481-2 dimensions mm (inches) embossment embossed carrier 330.2 dia (13.00 dia) top cover tape thickness 0.102 max (0.004 max) w=16.00 (0.63) b 0 = 10.10 (0.398) a 0 = 10.10 (0.398) p = 12.00 (0.472) k 1 = 3.80 (0.15) k 0 = 4.90 (0.19) user direction of feed


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